prelim.7/99 2N2405 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk medium power silicon npn planar transistor features ? for operation at junction temperature up to 200c ? planar construction for low noise and low leakage ? low output capacitance v cbo collector C base voltage v ceo collector C emitter voltage v ebo emitter C base voltage v cer collector C emitter sustaining voltage i c collector current p t total device dissipation @ t c up to 25c free air temperatures up to 25c t stg, t j storage and operatuing junction temperature r jc thermal resistance junction to case r ja thermal resistance junction to ambient 120v 90v 7v 140v 1a 5w 1w C65 to 200c 35c / w 175c / w mechanical data dimensions in mm (inches) to39 package absolute maximum ratings (t case = 25c unless otherwise stated) pin 1 = emitter underside view pin 2 = base pin 3 = collector 0.89 (0.035) max. 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 5.08 (0.200) typ. 45? 12.70 (0.500) min. 4.19 (0.165) 4.95 (0.195) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 7.75 (0.305) 8.51 (0.335) dia. 1 2 3
prelim.7/99 2N2405 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk p arameter t est conditions min. t yp. max. unit p arameter t est conditions min. t yp. max. unit electrical chara cteristics (t case = 25c unless otherwise stated) i c = 30ma i b = 0 i c = 100ma i b = 0 r be = 10 w i c = 100ma r be = 500 w i c = 100ma i c = 0.1ma i e = 0 i e = 0.1ma i c = 0 v cb = 90v i e = 0 v cb = 90v i e = 0 t c = 150c v be = - 5v i c = 0 i c = 150ma i b = 15ma i c = 50ma i b = 5ma i c = 150ma i b = 15ma i c = 50ma i b = 5ma i c = 10ma v ce = 10v i c = 150ma v ce = 10v i c = 10ma v ce = 10v v ceo(sus) collector C base breakdown voltage v cer(sus)* emitter C base breakdown voltage v (br)cbo* collector C base breakdown voltage v (br)ebo* emitter C base breakdown voltage i cbo collector cut-off current i ebo emitter cut-off current v ce(sat) collector C emitter saturation voltage v be(sat) base C emitter saturation voltage h fe* dc current gain t c = C55c 90 90 140 120 120 7 0.01 10 0.01 0.5 0.2 1.1 0.9 35 60 200 20 v v m a m a v v h fe small signal current gain h ib h rb hob c obo output capacitance c ib v ce = 5 i c = 5ma f = 1khz v ce = 10 i c = 50ma f = 20mhz v cb = 5v i c = 1ma f = 1.khz v cb = 10v i c = 5ma f = 1.khz v cb = 5v i c = 1ma f = 1.khz v cb = 10v i c = 5ma f = 1.khz v cb = 5v i c = 1ma f = 1.khz v cb = 10v i c = 5ma f = 1.khz v cb = 10v i e = 0 v be = -0.5v i c = 0 50 275 6 24 34 4 8 3 x10 .4 3 x10 .4 0.5 0.5 15 80 w m mho pf d ynamic chara cteristics (t case = 25c unless otherwise stated) pulse duration = 300 m s max, duty factor 2%
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